DOCTEUR DE L’Institut polytechnique de Grenoble

s................................................................................................................................... 13 Abstract ................................................................................................................................ 14 Résumé ................................................................................................................................. 16 Riassunto .............................................................................................................................. 19 Chapter 1 : Introduction ...................................................................................................... 21 1.1 Context : why alternative channel materials ? ............................................................... 22 1.1.1 Birth, growth and challenges of the semiconductor industry........................... 22 1.1.1.1 Birth of the semiconductor industry............................................................. 22 1.1.1.2 The silicon MOSFET, technical key of a success ........................................ 23 1.1.1.3 End of the "Happy scaling" era .................................................................... 25 1.1.2 Forthcoming challenges for the semiconductor industry ................................. 25 1.2 State of the art in the alternative channel material CMOS performance modeling ....... 28 1.2.1 Literature review .............................................................................................. 28 1.2.2 Aim of the thesis .............................................................................................. 31 Chapter 2 : Ballistic On current of nano nMOSFETs featuring arbitrarily oriented alternative channel material ..................................................................................................... 33 2.